We investigate positive bias stress (PBS)-induced hump behavior in the subthreshold current region of the transfer characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). We analyze the origin of hump creation as parasitic edge conduction using both experiment and simulation. Based on the simulated …Web
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Explanation: Boron shows anomalous behaviour with the other members of the group because of the smallest size and the group, highest ionization energy, highest electronegativity in the group, absence of vacant d- orbital and the allotropy, while the other members do not show. ... Gallium and indium do not react with cold or hot water but ...Web
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Gallium-tin oxide (GTO) semiconductor thin films were prepared by spin-coating with 2-methoxyethanol as the solvent. Their crystal structures, optical transparency, chemical states and surface morphologies, along with the electrical properties, were dependent on Ga contents and annealing temperatures. The optimized GTO channel …Web
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To understand the anomalous hump phenomena in Figs 2 and 3, ... The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer.Web
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Gallium is part of the boron group. It has a dangerously high melting point of 29°C. This means it can melt in your hand by simply holding it in your warm hands. It has the highest melting point of any metal that can be melted with a hand-held lighter. It will dissolve in stomach acids in its elemental form if ingested.Web
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Phase Separation and Anomalous Volume Expansion in Frozen Microscale Eutectic Indium-Gallium upon Remelting. The eutectic Ga-In (EGaIn) alloy has low …Web
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The measured temperature dependence of the site fraction of indium in the liquid was used to extend the metastable solubility curve for indium in liquid gallium down to a temperature of 150 K ...Web
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Within the subgap of amorphous oxide semiconductors like amorphous indium gallium zinc oxide (a-IGZO) are donor-like and acceptor-like states that control the operational physics of optically transparent thin-film transistors (TFTs). Hydrogen incorporation into the channel layer of a top-gate a-IGZO TFT exists as an electron donor …Web
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Transparent amorphous Indium-Gallium-Zinc-oxide thin films transistors (a-IGZO TFTs) were fabricated using spin-coating technique at a relative low annealing temperature of 300 °C. The effects of the gallium (Ga) concentration on the properties of the IGZO solutions, the optical properties of the a-IGZO films,and the a-IGZO TFTs device …Web
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Boron (B), Aluminium (Al), Gallium (Ga), Indium (In), Thallium (Tl), and Nihonium (Nh) are the elements that make up the boron family or Group 13. ... Group 13 Elements – Important Trends and Anomalous Properties of Boron. The tri-chlorides, tri-bromides, and tri-iodides of all these elements, being covalent in nature, are hydrolysed in water.Web
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A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination J. Appl. Phys ...Web
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The liquid metal used was a eutectic alloy of gallium and indium (eGaIn) obtained from The Indium Corporation as a pre-alloyed liquid with a composition of 75.5Ga–24.5In in weight percent. Pure gallium was obtained from Alfa …Web
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In AlInN growth, some groups observed anomalous gallium incorporation without any intentional gallium supply [8], [9], [10] and it is very relevant to our results reported here. ... This article discusses the key challenges and the recent breakthroughs in realizing high-quality indium (In)-rich indium gallium nitride (InGaN) epilayers and …Web
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The anomalous hump phenomenon is attributed to the existence of both main current path composed by electron and parasitic current path induced ... Md Delwar Hossain, et al., "Effect of SiO 2 and SiO 2 /SiN x passivation on the stability of amorphous indium-gallium zinc-oxide thin-film transistors under high humidity", IEEE Transactions …Web
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Guo, N. et al. Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature. Adv. Mater. 26, 8203–8209 (2014).Web
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Journal Article: Anomalous Behavior of Negative Bias Illumination Stress Instability in an Indium Zinc Oxide Transistor: A Cation Combinational ApproachWeb
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Liquid metals based on gallium are promising materials for soft, stretchable, and shape reconfigurable electromagnetic devices. The behavior of these metals relates directly to the thicknesses of their surface oxide layers, which can be determined nondestructively by ellipsometry if their dielectric functions e are known. This paper …Web
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Liquid metals based on gallium are promising materials for soft, stretchable, and shape reconfigurable electromagnetic devices. The behavior of these metals relates …Web
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In the field of stretchable electronics, eutectic gallium–indium alloys (EGaIn) have become an ideal conductive material due to their exceptional electrical conductivity and natural …Web
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Two important GaLMs are eutectic gallium–indium alloy (EGaIn, 75% Ga and 25% In by weight, melting point: 15.5 °C) and eutectic gallium–indium–tin alloy (GaInSn or Galinstan, ...Web
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In this paper, we investigated an anomalous hump in the bottom gate staggered amorphous indium-gallium zinc oxide thin-film transistors. During the positive gate bias stress, a positive threshold ...Web
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Indium–zinc oxide (IZO) thin films were fabricated by spin coating using acetate- and nitrate-based precursors, and thin film transistors (TFTs) were further fabricated employing the IZO films as the active channel layer. The impact of the indium concentration on the properties of the solutions, the structure and optical transmittance …Web
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resolved as a separate peak in amorphous gallium films(CN = 9.3).11 Besides covalent Ga−Ga bonds in the firstcoordination shell, rearrangements in the …Web
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The anomalous gallium-enriched sediments originated from a complex combination of hydrothermal fluids, original biomass and terrigenous materials. For the M 1 stone coal-bearing seams, gallium most likely occurred in the mode of GaAs, Ga x In 1-x As and GaO(OH), while modes of gallium in the M 2 to M 4 seams is interrelated with the …Web
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Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors | Applied …Web
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We report the effect of H 2 plasma treatment on amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT). The changes in electrical characteristics and stability of the a-IGZO TFT treated by H 2 plasma were evaluated under thermal stress. Each device exhibited a change in the subthreshold swing, turn on …Web
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Trends and anomalous properties of boron. Borax. Diborane, B 2 H 6. Orthoboric acid. Boron and aluminium. Group 14 elements. Trends and anomalous behaviour of carbon. The members of Group 13 elements are: Boron. Aluminium. Gallium. Indium. Thallium. Oxidation States and Inert Pair Effect. The normal oxidation state …Web
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Reduced Contact Resistance in Inkjet Printed High-Performance Amorphous Indium Gallium Zinc Oxide Transistors. ACS Applied Materials & Interfaces 2012, 4 (3), 1614-1619.Web
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Anomalous gallium concentrations were discovered in the M 3 stone coal-bearing seam from the middle Cambrian strata in central China, and it reached to 747 mg/kg which was 125, 114 and 16.7 times higher than the global hard coal average (6 mg/kg), ultra-large coal-hosted ore deposit of aluminum–gallium (44.8 mg/kg).Web
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This paper reports on the dielectric functions of liquid gallium and the eutectic gallium indium (EGaIn) alloy from 1.24 to 3.1 eV at room temperature, measured by …Web
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Considering gallium-based liquid metal (G-LM) waste as a kind of hazardous waste, it may pose a serious threat to the surrounding environment and human health if it improperly disposed. Meanwhile, gallium and indium are its …Web
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The analysis of constant gate bias stress indicated that the anomalous hump was influenced by the migration of positively charged mobile interstitial zinc ion towards the top side of the a-IGZO channel layer. ..., title={Anomalous Stress-Induced Hump Effects in Amorphous Indium Gallium Zinc Oxide TFTs}, author={Yu-Mi Kim and Kwang-Seok …Web
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This study investigates the local atomic structure of liquid gallium-indium alloys by a combination of density measurements, diffraction data, and Monte-Carlo …Web
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The concept of liquid metal membranes for hydrogen separation, based on gallium or indium, was recently introduced as an alternative to conventional palladium-based membranes. The potential of ...Web
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identical for indium and gallium. This anomalous behaviour of the asymmetric ethers poses an interesting !>roblem. A possible explanation may be that the greater dipole moments of these ethers ...Web
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Source/drain series-resistance effects in amorphous gallium-indium zinc-oxide thin film transistors. IEEE Electron Device Lett., 29 (8) (2008), p. 879. View in Scopus Google Scholar [15] S. Luan, G.W. Neudeck. An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors.Web
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